smbj5.0 thru smbj188ca vishay general semiconductor document number: 88392 revision: 04-sep-07 www.vishay.com 93 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 600 w peak pulse power capability with a 10/1000 s waveform, repet itive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214aa (smbj) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional devices use c or ca suffix (e.g. smbj10ca). electrical characteristics apply in both directions. primary characteristics v wm 5.0 v to 188 v p ppm 600 w i fsm (uni-directional only) 100 a t j max. 150 c do-214aa (smb j-bend) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
smbj5.0 thru smbj188ca vishay general semiconductor www.vishay.com document number: 88392 revision: 04-sep-07 94 electrical characteristics (t a = 25 c unless otherwise noted) device type modified ?j? bend lead device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min max (+) smbj5.0 kd kd 6.40 7.82 10 5.0 800 62.5 9.6 (+) smbj5.0a (5) ke ke 6.40 7.07 10 5.0 800 65.2 9.2 (+) smbj6.0 kf kf 6.67 8.15 10 6.0 800 52.6 11.4 (+) smbj6.0a kg kg 6.67 7.37 10 6.0 800 58.3 10.3 (+) smbj6.5 kh ah 7.22 8.82 10 6.5 500 48.8 12.3 (+) smbj6.5a kk ak 7.22 7.98 10 6.5 500 53.6 11.2 (+) smbj7.0 kl kl 7.78 9.51 10 7.0 200 45.1 13.3 (+) smbj7.0a km km 7.78 8.60 10 7.0 200 50.0 12.0 (+) smbj7.5 kn an 8.33 10.2 1.0 7.5 100 42.0 14.3 (+) smbj7.5a kp ap 8.33 9.21 1.0 7.5 100 46.5 12.9 (+) smbj8.0 kq aq 8.89 10.9 1.0 8.0 50 40.0 15.0 (+) smbj8.0a kr ar 8.89 9.83 1.0 8.0 50 44.1 13.6 (+) smbj8.5 ks as 9.44 11.5 1.0 8.5 20 37.7 15.9 (+) smbj8.5a kt at 9.44 10.4 1.0 8.5 20 41.7 14.4 (+) smbj9.0 ku au 10.0 12.2 1.0 9.0 10 35.5 16.9 (+) smbj9.0a kv av 10.0 11.1 1.0 9.0 10 39.0 15.4 (+) smbj10 kw aw 11.1 13.6 1.0 10 5.0 31.9 18.8 (+) smbj10a kx ax 11.1 12.3 1.0 10 5.0 35.3 17.0 (+) smbj11 ky ky 12.2 14.9 1.0 11 5.0 29.9 20.1 (+) smbj11a kz kz 12.2 13.5 1.0 11 5.0 33.0 18.2 (+) smbj12 ld bd 13.3 16.3 1.0 12 5.0 27.3 22.0 (+) smbj12a le be 13.3 14.7 1.0 12 5.0 30.2 19.9 (+) smbj13 lf lf 14.4 17.6 1.0 13 1.0 25.2 23.8 (+) smbj13a lg lg 14.4 15.9 1.0 13 1.0 27.9 21.5 (+) smbj14 lh bh 15.6 19.1 1.0 14 1.0 23.3 25.8 (+) smbj14a lk bk 15.6 17.2 1.0 14 1.0 25.9 23.2 (+) smbj15 ll bl 16.7 20.4 1.0 15 1.0 22.3 26.9 (+) smbj15a lm bm 16.7 18.5 1.0 15 1.0 24.6 24.4 (+) smbj16 ln ln 17.8 21.8 1.0 16 1.0 20.8 28.8 (+) smbj16a lp lm 17.8 19.7 1.0 16 1.0 23.1 26.0 (+) smbj17 lq lq 18.9 23.1 1.0 17 1.0 19.7 30.5 (+) smbj17a lr lr 18.9 20.9 1.0 17 1.0 21.7 27.6 (+) smbj18 ls bs 20.0 24.4 1.0 18 1.0 18.6 32.2 (+) smbj18a lt bt 20.0 22.1 1.0 18 1.0 20.5 29.2 (+) smbj20 lu lu 22.2 27.1 1.0 20 1.0 16.8 35.8 (+) smbj20a lv lv 22.2 24.5 1.0 20 1.0 18.5 32.4 (+) smbj22 lw bw 24.4 29.8 1.0 22 1.0 15.2 39.4 (+) smbj22a lx bx 24.4 26.9 1.0 22 1.0 16.9 35.5 (+) smbj24 ly by 26.7 32.6 1.0 24 1.0 14.0 43.0 (+) smbj24a lz bz 26.7 29.5 1.0 24 1.0 15.4 38.9 (+) smbj26 md cd 28.9 35.3 1.0 26 1.0 12.9 46.6 (+) smbj26a me ce 28.9 31.9 1.0 26 1.0 14.3 42.1 (+) smbj28 mf mf 31.1 38.0 1.0 28 1.0 12.0 50.0 (+) smbj28a mg mg 31.1 34.4 1.0 28 1.0 13.2 45.4 (+) smbj30 mh ch 33.3 40.7 1.0 30 1.0 11.2 53.5 (+) smbj30a mk ck 33.3 36.8 1.0 30 1.0 12.4 48.4 (+) smbj33 ml cl 36.7 44.9 1.0 33 1.0 10.2 59.0 (+) smbj33a mm cm 36.7 40.6 1.0 33 1.0 11.3 53.3 (+) smbj36 mn cn 40.0 48.9 1.0 36 1.0 9.3 64.3 (+) smbj36a mp cp 40.0 44.2 1.0 36 1.0 10.3 58.1 (+) smbj40 mq cq 44.4 54.3 1.0 40 1.0 8.4 71.4 (+) smbj40a mr cr 44.4 49.1 1.0 40 1.0 9.3 64.5
smbj5.0 thru smbj188ca vishay general semiconductor document number: 88392 revision: 04-sep-07 www.vishay.com 95 notes: (1) pulse test: tp 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directi onal types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consis tent with ansi/ieee c62.35 (5) for the bi-directional smbg/smbj5.0ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 50 a (uni-directional only) (+) underwriters laboratory recognition for the classification of pr otectors (qvgq2) under the ul standard for safety 497b and file number e136766 for both uni-directional and bi-directional devices (+) smbj43 ms cs 47.8 58.4 1.0 43 1.0 7.8 76.7 (+) smbj43a mt ct 47.8 52.8 1.0 43 1.0 8.6 69.4 (+) smbj45 mu mu 50.0 61.1 1.0 45 1.0 7.5 80.3 (+) smbj45a mv mv 50.0 55.3 1.0 45 1.0 8.3 72.7 (+) smbj48 mw mw 53.3 65.1 1.0 48 1.0 7.0 85.5 (+) smbj48a mx mx 53.3 58.9 1.0 48 1.0 7.8 77.4 (+) smbj51 my my 56.7 69.3 1.0 51 1.0 6.6 91.1 (+) smbj51a mz mz 56.7 62.7 1.0 51 1.0 7.3 82.4 (+) smbj54 nd nd 60.0 73.3 1.0 54 1.0 6.2 96.3 (+) smbj54a ne ne 60.0 66.3 1.0 54 1.0 6.9 87.1 (+) smbj58 nf nf 64.4 78.7 1.0 58 1.0 5.8 103 (+) smbj58a ng ng 64.4 71.2 1.0 58 1.0 6.4 93.6 (+) smbj60 nh nh 66.7 81.5 1.0 60 1.0 5.6 107 (+) smbj60a nk nk 66.7 73.7 1.0 60 1.0 6.2 96.8 (+) smbj64 nl nl 71.1 86.9 1.0 64 1.0 5.3 114 (+) smbj64a nm nm 71.1 78.6 1.0 64 1.0 5.8 103 (+) smbj70 nn nn 77.8 95.1 1.0 70 1.0 4.8 125 (+) smbj70a np np 77.8 86.0 1.0 70 1.0 5.3 113 (+) smbj75 nq nq 83.3 102 1.0 75 1.0 4.5 134 (+) smbj75a nr nr 83.3 92.1 1.0 75 1.0 5.0 121 (+) smbj78 ns ns 86.7 106 1.0 78 1.0 4.3 139 (+) smbj78a nt nt 86.7 95.8 1.0 78 1.0 4.8 126 (+) smbj85 nu nu 94.4 115 1.0 85 1.0 4.0 151 (+) smbj85a nv nv 94.4 104 1.0 85 1.0 4.4 137 (+) smbj90 nw nw 100 122 1.0 90 1.0 3.8 160 (+) smbj90a nx nx 100 111 1.0 90 1.0 4.1 146 (+) smbj100 ny ny 111 136 1.0 100 1.0 3.4 179 (+) smbj100a nz nz 111 123 1.0 100 1.0 3.7 162 (+) smbj110 pd pd 122 149 1.0 110 1.0 3.1 196 (+) smbj110a pe pe 122 135 1.0 110 1.0 3.4 177 (+) smbj120 pf pf 133 163 1.0 120 1.0 2.8 214 (+) smbj120a pg pg 133 147 1.0 120 1.0 3.1 193 (+) smbj130 ph ph 144 176 1.0 130 1.0 2.6 231 (+) smbj130a pk pk 144 159 1.0 130 1.0 2.9 209 (+) smbj150 pl pl 167 204 1.0 150 1.0 2.2 268 (+) smbj150a pm pm 167 185 1.0 150 1.0 2.5 243 (+) smbj160 pn pn 178 218 1.0 160 1.0 2.1 287 (+) smbj160a pp pp 178 197 1.0 160 1.0 2.3 259 (+) smbj170 pq pq 189 231 1.0 170 1.0 2.0 304 (+) smbj170a pr pr 189 209 1.0 170 1.0 2.2 275 smbj188 pt pt 209 255 1.0 188 1.0 1.7 344 smbj188a ps ps 209 231 1.0 188 1.0 2.0 328 electrical characteristics (t a = 25 c unless otherwise noted) device type modified ?j? bend lead device marking code breakdown voltag e v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min max
smbj5.0 thru smbj188ca vishay general semiconductor www.vishay.com document number: 88392 revision: 04-sep-07 96 note: (1) mounted on minimum recommended pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient (1) r ja 100 c/w typical thermal resistance, junction to lead r jl 20 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smbj5.0a-e3/52 0.096 52 750 7" di ameter plastic tape and reel smbj5.0a-e3/5b 0.096 5b 3200 13" diameter plastic tape and reel smbj5.0ahe3/52 (1) 0.096 52 750 7" diameter plastic tape and reel smbj5.0ahe3/5b (1) 0.096 5b 3200 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1 10 100 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 6000 10 1 100 200 uni-directional bi-directional c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m
smbj5.0 thru smbj188ca vishay general semiconductor document number: 88392 revision: 04-sep-07 www.vishay.com 97 package outline dimensions in inches (millimeters) figure 5. typical transient thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 100 1.0 10 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive peak forward surge current 10 200 100 100 10 1 8 .3 ms single half sine- w a v e uni-directional only nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) do-214aa (smb-j-bend) mountin g pad layout 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.00 8 (0.2) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band 0.0 8 5 (2.159) max. 0.220 ref. 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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